CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY
TOSHIBA MOS MEMORY PRODUCT
32,768 WORD X 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY
TC57256...
Description
TOSHIBA MOS MEMORY PRODUCT
32,768 WORD X 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABEL READ ONLY MEMORY
TC57256D-20 TC57256D-25
SILICON STACKED GATE MOS
DESCRIPTION
The TC57256D is a 32,768 word X8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. For read operation, the TC57256D's access time is 200ns, and the TC57256D operates from a single 5-volt power supply and has low power standby mode which reduces the power dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level signal to the CE input. Advanced CMOS technology reduces the maximum active current to 30 mA/5MHz
and standby current to 100pA. For program operation, the programming is achiev-
ed by using the high speed programming mode. Program supply voltage is 21 V. The programming of the TC57256D is accomplished within one and a half minutes (typ.) TC57256D is fabricated using CMOS technology and N-channel silicon double layer gate
MOS tec...
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