Document
Ordering number : ENN6785
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Meets radial taping.
2SK3448
N-Channel Silicon MOSFET
2SK3448
Ultrahigh-Speed Switching Use
Package Dimensions
unit : mm 2087A
[2SK3448] 2.5
1.45 6.9 1.0
4.0 1.0
4.5 1.0
1.0
0.9 1
0.6
0.5 23
0.45
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions PW≤10µs, duty cycle≤1%
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2
ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5.