SEMICONDUCTOR May 1997
RFD10P03L, RFD10P03LSM, RFP10P03L
10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET
Features...
SEMICONDUCTOR May 1997
RFD10P03L, RFD10P03LSM, RFP10P03L
10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET
Features
Description
10A, 30V rDS(ON) = 0.200Ω Temperature Compensating PSPICE Model PSPICE Thermal Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature
Ordering Information
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
Symbol
PART NUMBER
PACKAGE
BRAND
D
RFD10P03L RFD10P03LSM
TO-251AA TO-252AA
10P03L 10P03L
G
RFP10P03L
TO-220AB
F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO...