SILICON STACKED GATE MOS
TOSHIBA MOS MEMORY PRODUCT
1 MEGA BIT (131 ,072 WORD X 8 BIT)
SILICON STACKED GATE MOS CMOS U.V. Erasable & Electricall...
Description
TOSHIBA MOS MEMORY PRODUCT
1 MEGA BIT (131 ,072 WORD X 8 BIT)
SILICON STACKED GATE MOS CMOS U.V. Erasable & Electrically Programmable Read Only Memory
TC5710000-20, TC571 0000-25 TC571 0010-20, TC571 0010-25
IOESCRIPTIONj
The TC57l000D/TC57l00lD is a 131,072 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory.
The TC57l000D is JEDEC standard pin configuration and the TC57l00lD is compatible with 28 pin It-! bit Mask ROM. Both products are packed in 32 pin standard cerdip package.
TC57l000D/TC57l00lD is fabricated with the CMOS technology. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns.
The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programmer is only 14 seconds by using the high speed programming algorithm.
IFEATURESI
Peripheral circuit: CMOS
Memory cell
N-MOS
Fast access Time
TC57l000D-20/T...
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