2N7000K

2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V  High power and current handling capability  Very fast switching  Halogen free and RoHS compliant device Applications  High speed line driver SGD TO-92 Ordering Information Part Number Marking Code Package Packaging 2N7000K 2N7000K TO-92 Tape Marking Information 2N 7000K YWW Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code(year,week) Absolute Maximum Ratings (Tamb=25℃, Unless otherwise specified) Characteristic Symbol Drain-Source voltage Gate-Source voltage Maximum drain current (Note 1) Pulsed drain current (Note 1) Power dissipation (Note 2) Operating junction temperature Storage temperature range Thermal resistance junction to ambient (Note 2) VDS VGS ID IDP PD Tj Tstg Rth(j-a) Note 1) Limited only maximum junction temperature Note 2) Device mounted o...