SMN18T50FD

SMN18T50FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS = 500V  Low gate charge: Qg=65nC (Typ.)  Low drain-source On resistance: RDS(on)=0.21Ω (Typ.)  100% avalanche tested  RoHS compliant device Ordering Information Part Number Marking Package SMN18T50FD SMN18T50 TO-220F-3L GDS TO-220F-3L Marking Information AUAKUK SMNF1ΔY8YMTMD5DD0 D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) FYMDD -. F: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Peak diode recovery dv/dt (Note 3) VDSS VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD dv/dt ...