SNN4010D

SNN4010D N-Ch Trench MOSFET Power Switching Application Features  Drain-source breakdown voltage: BVDSS=100V  Low gate charge device  Low drain-source On resistance: RDS(on)=25mΩ (Typ.)  Advanced trench process technology  High avalanche energy, 100% test Ordering Information Part Number Marking Package SNN4010D SNN4010 TO-252 D G S TO-252 Marking Information SNN 4010 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage VDSS VGSS Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 1) Single avalanche current Power dissipation Operating junction temperature Storage temperature range Tc=25C ID Tc=100C IDM EAS IAS PD TJ Tstg * Limited only maximum junction temperature Rev. date: 14-MAR-13 KSD-T6O041-001 Rating 100 20 45 35 180 163 25.5 8...