Advanced N-Ch Trench MOSFET
SNN0630Q
Advanced N-Ch Trench MOSFET
Portable Equipment Application
Features
Low On-state resistance: 28m at VGS = ...
Description
SNN0630Q
Advanced N-Ch Trench MOSFET
Portable Equipment Application
Features
Low On-state resistance: 28m at VGS = 10V, ID = 2.9A Low gate charge: Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested
Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
G D S
SNN0630Q
SNN0630
SOT-223
D
SOT-223
Marking Information
SNN0630 YWW
Column 1: Device Code Column 2: Production Information e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
ID
Tc=25C Tc=70C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction ...
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