Document
Semiconductor
SMK0460P
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=5.8pF(Typ.) • Low gate charge : Qg=13nC(Typ.) • Low RDS(on) :RDS(on)=2.5Ω(Max.)
Ordering Information
Type No.
Marking
SMK0460P
SMK0460
Package Code TO-220AB-3L
PIN Connection
G
GDS
TO-220AB-3L
D S
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage Drain current (DC)
VGSS (Tc=25℃)
ID (Tc=100℃)
Drain current (Pulsed) *
IDM
Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy
② ② ① ①
PD IAS EAS IAR EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
600 ±30
4 2.53
16 70 4 225 4 10 150 -55~150
Characteristic
Thermal resistance
Junction-case Junction-ambient
Symbol
Rth(J-C) Rth.