SMK0260IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
• Drain-Source breakdown voltage: BVDSS=...
SMK0260IS
Advanced N-Ch Power MOSFET
SWITCHING
REGULATOR APPLICATION
Features
Drain-Source breakdown voltage: BVDSS=600V (Min.) Low gate charge: Qg=7nC (Typ.) Low drain-source On resistance: RDS(on)=3.9Ω (Typ.) 100% avalanche tested
RoHS compliant device
Ordering Information
Part Number SMK0260IS
Marking SMK0260
Package
I-PAK (Short Lead)
GDS
I-PAK
Marking Information
SMK 0260
YWW
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) * Avalanche current (Note 2) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS VGSS ID Tc=25°C
Tc=100°C IDM IAS EAS IAR EAR PD TJ Tstg
* Limited only maximum junction temper...
