SMK0465IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
• Drain-source breakdown voltage: BVDSS=...
SMK0465IS
Advanced N-Ch Power MOSFET
SWITCHING
REGULATOR APPLICATION
Features
Drain-source breakdown voltage: BVDSS=650V Low gate charge: Qg=11.2nC (Typ.) Low drain-source On-resistance: RDS(on)=3Ω (Max.) RoHS compliant device
Halogen free package
Ordering Information
Part Number
Marking
Package
SMK0465IS
SMK0465
I-PAK (Short lead)
GDS
I-PAK (Short Lead)
Marking Information
SMK 0465 YWW
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) * Single avalanche current (Note 2) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS VGSS ID Tc=25°C
Tc=100°C IDM IAR EAS IAR EAR PD TJ Tstg
* Limited only maximum ju...
