MOSFET
R6010MND3
Nch 600V 10A Power MOSFET
Datasheet
NotNeRewcDoemsimgennsded for
VDSS
600V
lOutline
RDS(on)(Max....
Description
R6010MND3
Nch 600V 10A Power MOSFET
Datasheet
NotNeRewcDoemsimgennsded for
VDSS
600V
lOutline
RDS(on)(Max.)
0.380Ω
ID
±10A
TO-252
PD
143W
lFeatures
1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching Power Supply
Type Tape width (mm) Basic ordering unit (pcs)
16 2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6010M Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±10 A
Pulsed drain current
IDP*2 ±30 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS 1.5 A
Avalanche energy, single pulse
EAS*3
0.6 mJ
Power dissipation (Tc = 25°C)
PD*4 143 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/11
20170605 - Rev.003
NotNeRewcDoemsimgennsded for
R6010MND3
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
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