R8002ANJ

R8002ANJ 　　Nch 800V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 62W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lOutline TO-263S SC-83 LPT(S) 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 24 1000 Taping code TL Marking R8002ANJ lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 800 V Continuous drain current (Tc = 25°C) ID*1 ±2 A Pulsed drain current IDP*2 ±8 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 1 A Avalanche energy, single pulse EAS*3 0.265 mJ Power dissipation (Tc = 25°C) PD 62 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170905 - Rev.001 　 　 R8002ANJ 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC RthJA Tsold Values Unit Min. Typ. Max. - - 2.01 ℃/W - - 80 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Param...