Power MOSFET
RQ5E035BN
Nch 30V 3.5A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 37mΩ
1W
lFeatures 1) Low on - resistance. 2) Built...
Description
RQ5E035BN
Nch 30V 3.5A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 37mΩ
1W
lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT3
SC-96 SOT-346T
lInner circuit
Datasheet
lApplication Switching
lAbsolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Range of storage temperature
lPackaging specifications
Packing
Reel size (mm) Type Tape width (mm)
Basic ordering unit (pcs) Taping code Marking
Embossed Tape 180 8 3000 TL ZS
Symbol
Value
Unit
VDSS
30
V
ID*1
ID,pulse*2
±12
A
VGSS
±20
V
EAS*3
1.9
mJ
IAS*3
3.5
A
PD*4
1
W
Tj
150
℃
Tstg
-55 to +150
℃
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1/11
20150730 - Rev.002
RQ5E035BN
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol RthJA*4
Values Unit
Min. Typ. Max. - 125 - ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃...
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