Document
RQ6E085BN
Nch 30V 8.5A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 14.4mΩ ±8.5A 1.25W
lFeatures
1) Low on - resistance. 2) Small Surface Mount Package (TSMT6). 3) Pb-free lead plating ; RoHS compliant
lOutline
SOT-457T
SC-95
TSMT6
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
180
lApplication Switching
Type Tape width (mm) Quantity (pcs)
8 3000
Taping code
TCR
Marking
AB
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse
Power dissipation
Junction temperature Operating junction and storage temperature range
VDSS ID*1 IDP*2 VGSS IAS*3 EAS*3 PD*4 PD*5 Tj Tstg
30 ±8.5 ±18 ±20 8.5 25.8 1.25 0.95 150 -55 to +150
V A A V A mJ W W
℃ ℃
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20190527 - Rev.001
RQ6E085BN
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol
RthJA*4 RthJA*5
Values Min. Typ. Max.
- - 100 - - 132
Unit
℃/W ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃
Zero gate voltage drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage temperature coefficient
VGS(th) VDS = VGS, ID = 1mA ΔVGS(th) ID = 1mA ΔTj referenced to 25℃
Static drain - source on - state resistance
RDS(on)*6 VGS = 10V, ID = 8.5A VGS = 4.5V, ID = 8.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer Admittance
|Yfs|*6 VDS = 5V, ID = 8.5A
Values Unit
Min. Typ. Max. 30 - - V
- 21 - mV/℃
- - 1 μA
- - ±100 nA 1.0 - 2.5 V
- -3 - mV/℃
- 11.1 14.4 mΩ
- 13.9 17.3
- 2.6 -
Ω
8 - -S
*1 Limited only by maximum temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L ⋍ 0.5mH, VDD = 15V, RG = 25Ω, STARTING Tj = 25℃ Fig.3-1,3-2 *4 Mounted on a ceramic boad (30×30×0.8mm) *5 Mounted on a FR4 (25×25×0.8mm) *6 Pulsed
www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190527 - Rev.001
RQ6E085BN
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time
Ciss Coss Crss td(on)*6 tr*6 td(off)*6 tf*6
VGS = 0V VDS = 15V f = 1MHz
VDD ⋍ 15V,VGS = 10V
ID = 4.25A RL ⋍ 3.5Ω RG = 10Ω
Datasheet
Values Min. Typ. Max.
- 1350 - 220 - 180 - 11 - 16 - 70 - 31 -
Unit pF ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge Gate - Drain charge
Qg*6
Qgs*6 Qgd*6
VDD ⋍ 15V ID = 8.5A
VGS = 10V VGS = 4.5V
Values Min. Typ. Max.
- 32.7 - 16.6 - 6.6 - 6.0 -
Unit nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Continuous forward current Pulse forward current Forward voltage
IS*1 ISP*2 VSD*6
Ta = 25℃ VGS = 0V, IS = 1.0A
- - 1.0 - - 18 - - 1.2
Unit
A A V
www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved.
3/11
20190527 - Rev.001
RQ6E085BN
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power dissipation
www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved.
4/11
20190527 - Rev.001
RQ6E085BN
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Vo.