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RQ6E085BN Dataheets PDF



Part Number RQ6E085BN
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet RQ6E085BN DatasheetRQ6E085BN Datasheet (PDF)

RQ6E085BN   Nch 30V 8.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 14.4mΩ ±8.5A 1.25W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT6). 3) Pb-free lead plating ; RoHS compliant lOutline SOT-457T SC-95 TSMT6          lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Quantity (pcs) 8 3000 Taping code TCR Marking AB lAbsolute maximum ratings (Ta = 25°C ,unless o.

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RQ6E085BN   Nch 30V 8.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 14.4mΩ ±8.5A 1.25W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT6). 3) Pb-free lead plating ; RoHS compliant lOutline SOT-457T SC-95 TSMT6          lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Quantity (pcs) 8 3000 Taping code TCR Marking AB lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID*1 IDP*2 VGSS IAS*3 EAS*3 PD*4 PD*5 Tj Tstg 30 ±8.5 ±18 ±20 8.5 25.8 1.25 0.95 150 -55 to +150 V A A V A mJ W W ℃ ℃                                                                                          www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.001     RQ6E085BN            lThermal resistance Parameter Thermal resistance, junction - ambient                 Datasheet                      Symbol RthJA*4 RthJA*5 Values Min. Typ. Max. - - 100 - - 132 Unit ℃/W ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient  ΔV(BR)DSS  ID = 1mA    ΔTj     referenced to 25℃ Zero gate voltage drain current IDSS VDS = 30V, VGS = 0V Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) VDS = VGS, ID = 1mA  ΔVGS(th)   ID = 1mA    ΔTj     referenced to 25℃ Static drain - source on - state resistance RDS(on)*6 VGS = 10V, ID = 8.5A VGS = 4.5V, ID = 8.5A Gate resistance RG f = 1MHz, open drain Forward Transfer Admittance |Yfs|*6 VDS = 5V, ID = 8.5A Values Unit Min. Typ. Max. 30 - - V - 21 - mV/℃ - - 1 μA - - ±100 nA 1.0 - 2.5 V - -3 - mV/℃ - 11.1 14.4 mΩ - 13.9 17.3 - 2.6 - Ω 8 - -S *1 Limited only by maximum temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L ⋍ 0.5mH, VDD = 15V, RG = 25Ω, STARTING Tj = 25℃ Fig.3-1,3-2 *4 Mounted on a ceramic boad (30×30×0.8mm) *5 Mounted on a FR4 (25×25×0.8mm) *6 Pulsed                                               www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/11                                            20190527 - Rev.001 RQ6E085BN        lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Ciss Coss Crss td(on)*6 tr*6 td(off)*6 tf*6 VGS = 0V VDS = 15V f = 1MHz VDD ⋍ 15V,VGS = 10V ID = 4.25A RL ⋍ 3.5Ω RG = 10Ω                 Datasheet Values Min. Typ. Max. - 1350 - 220 - 180 - 11 - 16 - 70 - 31 - Unit pF ns lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Qg*6 Qgs*6 Qgd*6 VDD ⋍ 15V ID = 8.5A VGS = 10V VGS = 4.5V Values Min. Typ. Max. - 32.7 - 16.6 - 6.6 - 6.0 - Unit nC lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Continuous forward current Pulse forward current Forward voltage IS*1 ISP*2 VSD*6 Ta = 25℃ VGS = 0V, IS = 1.0A - - 1.0 - - 18 - - 1.2 Unit A A V                                                                                            www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/11 20190527 - Rev.001 RQ6E085BN        lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve          Datasheet Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal          Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power          dissipation                                                                                            www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 4/11 20190527 - Rev.001 RQ6E085BN        lElectrical characteristic curves Fig.5 Typical Output Characteristics(I)          Datasheet Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Vo.


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