June 2002
AO4805 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4805 uses advanced ...
June 2002
AO4805 Dual P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4805 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -8A RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 19mΩ (VGS = -10V)
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
SOIC-8
D1 D2 G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum -30 ±25 -8 -6.9 -40 2 1.44
-55 to 150
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 50 73 31
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