P0990AU

P0990AU N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 900V 1.3Ω @VGS = 10V ID 9A TO-247 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 900 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 9 5.6 36 Avalanche Current IAS 6 Avalanche Energy L = 10mH EAS 180 Power Dissipation TC= 25 °C TC= 100°C PD 250 100 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 50 0.5 UNITS °C / W REV 1.0 1 2014-4-1 P0990AU N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Vol...