Document
P1065ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
0.75Ω @VGS = 10V
ID 10A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
L = 10mH
ID
IDM IAS EAS
10 6 35 5.1 132
Power DissipationA
TC = 25 °C TC = 100 °C
PD
33 12
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 60V , Starting TJ = 25°C
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3.8 62.5
UNITS °C / W
Ver 1.0
1 2012/4/16
P1065ATF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted.