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P1065ATF Dataheets PDF



Part Number P1065ATF
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P1065ATF DatasheetP1065ATF Datasheet (PDF)

P1065ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 0.75Ω @VGS = 10V ID 10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 10 6 35 5.1 132 Power DissipationA TC = 25 °C TC = 100 °C PD 33 12 Ope.

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P1065ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 0.75Ω @VGS = 10V ID 10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 10 6 35 5.1 132 Power DissipationA TC = 25 °C TC = 100 °C PD 33 12 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 60V , Starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.8 62.5 UNITS °C / W Ver 1.0 1 2012/4/16 P1065ATF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted.


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