P1070ATFS

P1070ATF / P1070ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 0.85Ω @VGS = 10V ID 10A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 10 6 30 6.8 230 Power Dissipation TC = 25 °C TC = 100 °C PD 46 18 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.7 62.5 UNITS °C / W Rev1.1 1 2015/7/10 P1070ATF / P1070ATFS N-Channel Enhancement Mode MOSFET ELECTRICAL CHA...