P0780ATF

P0780ATF/P0780ATFS N-Channel High Voltage Mode Field Effect Transistor PRODUCT SUMMARY V(BR)DSS RDS(ON) 800V 1.94Ω @VGS = 10V ID 7A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 800 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 7 4 21 Avalanche Energy3 EAS 61 Power Dissipation TC = 25 °C TC = 100 °C PD 57 23 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 10mH ,starting TJ = 25°C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.2 62.5 UNITS °C / W REV 1.1 1 2014-1-14 P0780ATF/P0780ATFS N-Channel High Voltage Mode Field Effect Transistor ELECTRICAL C...