GUVA-S12SD
TECHNICAL DATA
UV-B Sensor
Features
• Gallium Nitride Based Material • Schottky-type Photodiode • Photovolta...
GUVA-S12SD
TECHNICAL DATA
UV-B Sensor
Features
Gallium Nitride Based Material
Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current
Applications
UV Index Monitoring UV-A Lamp Monitoring
Absolute Maximum Ratings
Item
Symbol
Forward Current Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature *
IF VR Top Tst Tsol
* must be completed within 10 seconds
Value 1 5
-30 … +85 -40 … +90
260
Unit mA V °C °C °C
Characteristics (25°C)
Item Dark Current
Symbol ID
Photo Current
IPD
Temperature Coefficient Responsivity Spectral Detection Range
ITC
R λ
Test Conditions
VR = 0.1 V UVA Lamp, 1 mW/cm²
1 UVI
UVA Lamp λ = 300 nm, VR = 0 V
10% of R
Min. -
240
Typ. -
113 26 0.08 0.14 -
Max. 1 -
370
Unit nA nA nA % / °C A/W nm
Package Dimension
07.02.2011
GUVA-S12SD
1 of 2
Responsivity Curve Photocurrent along UV Power
07.02.2011
GUVA-S12SD
2 of 2
...