P2615ATFG

P2615ATFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 26mΩ @VGS = 10V ID 28A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 28 16 84 Avalanche Current IAS 12 Avalanche Energy L = 10mH EAS 753 Power Dissipation TC = 25 °C TC = 100 °C PD 45 18 Operating Junction & Storage Temperature Range Lead Temperature ( 1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle  1%. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.8 62.5 UNITS °C / W Ver 1.0 1 2012/4/13 P2615ATFG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) ...