P1350ATFS

P1350ATF / P1350ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 0.52Ω @VGS = 10V ID 13A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 13 10 45 8.8 387 Power Dissipation TC = 25 °C TC = 100 °C PD 34 13 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.6 62.5 UNITS °C / W Ver 1.0 1 2012/4/13 P1350ATF / P1350ATFS N-Channel Enhancement Mode MOSFET ELECTRICAL C...