BUZ102S

BUZ 102S SIPMOS Power Transistor Features N channel Enhancement mode Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current dv/dt rated 175 ˚C operating temperature VDS RDS(on) ID 55 0.018 52 V Ω A Type BUZ102S BUZ102S E3045A BUZ102S E3045 Package Ordering Code P-TO220-3-1 Q67040-S4011-A2 P-TO263-3-2 Q67040-S4011-A6 P-TO263-3-2 Q67040-S4011-A5 Packaging Tube Tape and Reel Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings, at Tj = 25 ˚C unless unless specified Parameter Symbol Continuous drain current TC = 25 ˚C TC = 100 ˚C ID Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 52 A, VDD = 25 V, RGS = 25 Ω IDpulse EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS = 52 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS...