THN6702F

Semiconductor □ Applications - VHF and UHF wide band amplifier □ Features - Medium power application (2W) - Power gain GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm Output power POUT = 33.5 dBm at VCE = 6.0 V, ICQ = 30 mA, f = 460 MHz THN6702F SiGe NPN Transistor SOT-89 Unit in mm 3 42 1 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter □ Absolute Maximum Ratings (TA = 25 ℃) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Sym bol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 15 10 1.5 900 2 150 -65 ~ 150 Unit V V V mA W ℃ ℃ 1 □ Thermal Characteristics Symbol Rth j-a Parameter Thermal Resistance from Junction to Ambient THN6702F Value 65 Unit K/W □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Test Conditions Collector Cut-off Current Emitter Cut-off Current DC Current Gai...