THN6301

Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm □ hFE Classification Marking AA1 AA2 hFE 125 to 300 80 to 160 □ Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO Collector to Emitter Breakdown Voltage VEBO Emitter to Base Breakdown Voltage Ic Collector Current (DC) PT Total Power Dissipation TSTG Storage Temperature TJ Operating Junction Temperature Caution : ESD sensitive device Pin Configuration Pin No Symbol 1B 2E 3C Description Base Emitter Collector □ Available Package Product Package THN6301S SOT-23 THN6301U SOT-323 THN6301Z SOT-343 THN6301E SOT-523 THN6301KF SOT-623F Unit : mm Dimension 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 2....