Semiconductor
□ Applications
- VHF and UHF power amplifier
□ Features
- High power gain GP = 14 dB at VCE = 6 V, IC = 40...
Semiconductor
□ Applications
- VHF and UHF power amplifier
□ Features
- High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz
- High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz
THN6701B
SiGe
NPN Transistor
SOT-223
Unit in mm
6.5 3.0
4
3.5 7.0
12
2.3 0.7
4.6
3
Pin Configuration
1. Base 2. Emitter 3. Collector 4. Emitter
□ Absolute Maximum Ratings (TA = 25 ℃)
Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Sym bol BVCBO BVCEO BVEBO
IC Ptot Tj Tstg
Ratings 17 12 1.5 1 3 150
-65 ~ 150
Unit V V V A W ℃ ℃
1
THN6701B
□ Thermal Characteristics
Symbol Rth j-a
Parameter Thermal Resistance from Junction to Ambient
Value 40
Unit K/W
□ Electrical Characteristics (TA = 25 ℃)
Parameter Collector Cut-off Current
Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance...
