STK0602

Semiconductor Description High speed switching application. Features High density cell design for low RDS(ON). Voltage controlled small signal switch Include Zener protection for ESD ruggedness. Ordering Information Type NO. STK0602 Marking K602 Outline Dimensions 2.4±0.1 1.30±0.1 1 3 2 STK0602 N-Channel Enhancement-Mode MOSFET Package Code SOT-23 unit : mm 2.9±0.1 1.90 Typ. 0.4 Typ. 1.12 Max. 0.38 0~0.1 -0.03 0.124 +0.05 0.2 Min. PIN Connections 1. Gate 2. Source 3. Drain KST-2136-000 1 STK0602 Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Drain Power dissipation Operating Junction and Storage temperature range Symbol VDSS VGS ID IDP PD TJ , Tstg Rating 60 ±8 200 800 200 -55~150 (Ta=25°C) Unit V V mA mA mW °C Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage Drain-Source o...