Power MOSFET. YMP7N60 Datasheet

YMP7N60 Datasheet PDF, Equivalent


Part Number

YMP7N60

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

YM

Total Page 7 Pages
PDF Download
Download YMP7N60 Datasheet


YMP7N60 Datasheet
YMP7N60
N-Channel
Enhancement Mode Power MOSFET
General Description
The YMP1404 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
600
1
1.2
7
V
A
Features
VDS=600VID= 7 A@ VGS =10V
RDS(ON)< 1.2 @ VGS =10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
GD S
100% UIS TESTED!
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-220F top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
YMP7N60
YMP7N60
TO-220F
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
YMP7N60
YMP7N60
600
7.0 7.0 *
4.4 4.4 *
28 28 *
± 30
420
7.0
14.7
5.5
147
48
1.18
0.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
1/7

YMP7N60 Datasheet
YMP7N60
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
YMP7N60
0.85
0.5
62.5
YMP7N60
2.6
--
62.5
Units
°C/W
°C/W
°C/W
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.65
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID = 3.5 A
(Note 4)
2.0
--
--
--
1.0
8.2
4.0
1.2
--
V
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1380 1800
-- 115 150
-- 23
30
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 7.0 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 7.0 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
30
80
125
85
38
6.4
15
70
170
260
180
50
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 7.0
ISM
VSD
trr
Qrr
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.0 A
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, IS = 7.0 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
415
4.6
28
1.4
--
--
A
A
V
ns
µC
2/7


Features Datasheet pdf YMP7N60 N-Channel Enhancement Mode Pow er MOSFET General Description The YMP1 404 uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge. This device is suit able for use in PWM, load switching and general purpose applications. Product Summary BVDSS typ. RDS(ON) typ. max. ID 600 1 1.2 7 V Ω Ω A Features ● VDS=600V;ID= 7 A@ VGS =10V; RDS (ON)< 1.2 Ω @ VGS =10V ● Special pr ocess technology for high ESD capabilit y ● Special designed for Convertors a nd power controls ● High density cell design for ultra low Rdson ● Fully c haracterized Avalanche voltage and curr ent ● Good stability and uniformity w ith high EAS ● Excellent package for good heat dissipation GD S 100% UIS T ESTED! Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply TO-220F top view Schema tic diagram Package Marking And Orderi ng Information Device Marking Device Device Package YMP7N60.
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