Document
ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
GENERAL DESCRIPTION
The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦12mΩ@VGS=10V
● RDS(ON)≦21mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch
PIN CONFIGURATION
(SOP-8) Top View
Ordering Information: ME4812B (Pb-free) ME4812B-G (Green prod.