DatasheetsPDF.com

C5819

2SC5819

Description

2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta =...

Toshiba Semiconductor

Download C5819 Datasheet

Similar Datasheet

C580 VCO Model - Z-Communications
C5800 NPN SILICON RF TRANSISTOR - Renesas
C5801 2SC5801 - NEC
C5802 Silicon NPN Power Transistor - SavantIC
C5802D KSC5802D - Fairchild Semiconductor
C5803 KSC5803 - KEC
C5803 2SC5803 - Inchange Semiconductor
C5803D KSC5803 - KEC
C5804 2SC5804 - Isahaya Electronics Corporation
C5811 2SC5811 - Sanyo Semicon Device

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)