K12A65D Datasheet: TK12A65D





K12A65D TK12A65D Datasheet

Part Number K12A65D
Description TK12A65D
Manufacture Toshiba
Total Page 9 Pages
PDF Download Download K12A65D Datasheet PDF

Features: MOSFETs Silicon N-Channel MOS (π-MOS ) TK12A65D 1. Applications • Switchin g Voltage Regulators 2. Features (1) Lo w drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward trans fer admittance: |Yfs| = 6.0 S (typ.) (3 ) Low leakage current: IDSS = 10 µA (m ax) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK12A65D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maxi mum Ratings (Note) (Ta = 25 unless o therwise specified) Characteristics S ymbol Rating Unit Drain-source volta ge VDSS 650 V Gate-source voltage VG SS ±30 Drain current (DC) (Note 1) ID 12 A Drain current (pulsed) (Not e 1) IDP 48 Power dissipation (Tc = 25) PD 50 W Single-pulse avalanch e energy (Note 2) EAS 611 mJ Avalan che current IAR 12 A Repetitive avala nche energy (Note 3) EAR 5.0 mJ Cha nnel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under h.

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MOSFETs Silicon N-Channel MOS (π-MOS)
TK12A65D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)
(2) High forward transfer admittance: |Yfs| = 6.0 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK12A65D
1: Gate (G)
2: Drain (D)
3: Source (S)
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 650 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
12 A
Drain current (pulsed)
(Note 1)
IDP
48
Power dissipation
(Tc = 25)
PD 50 W
Single-pulse avalanche energy
(Note 2)
EAS
611 mJ
Avalanche current
IAR 12 A
Repetitive avalanche energy
(Note 3)
EAR
5.0 mJ
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2010-09
1 2013-12-25
Rev.2.0

                    
     






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