TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1887
High-Current Switching Applications
2SA1887
Unit: m...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1887
High-Current Switching Applications
2SA1887
Unit: mm
Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC
PC
Tj Tstg
Rating
−80 −50 −7 −10 2.0 25 150 −55 to 150
Unit V V V A
W
°C °C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat)
fT Cob
VCB = −70 V, IE ...
