P1006BTF

NIKO-SEM N-Channel Enhancement Mode P1006BTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ ID 47A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 ° C TC = 100 ° C L = 0.1mH TC = 25 ° C TC = 100 ° C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RJA Junction-to-Case RJC 1Pulse width limited by maximum junction temperature. TYPICAL 1 23 1: GATE 2: DRAIN 3: SOURCE LIMITS 60 ±20 47 29 150 38 72.7 48 19 -55 to 150 UNITS V V A mJ W °C MAXIMUM 62.5 2.6 UNITS °C /W .ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MA...