P057AAT

P057AAT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 75V 5.8mΩ @VGS = 10V ID 129A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 129 82 410 Avalanche Current IAS 60 Avalanche Energy L = 0.3mH EAS 557 Power Dissipation TC = 25 °C TC = 100 °C PD 192 77 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Limited by package. 2Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 0.65 63 UNITS °C / W Ver 1.0 1 2012/4/16 P057AAT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIO...