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PA610ATF Dataheets PDF



Part Number PA610ATF
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet PA610ATF DatasheetPA610ATF Datasheet (PDF)

PA610ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 160mΩ @VGS = 10V ID 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 8 5.4 32 Avalanche Current IAS 8 Avalanche Energy L = 0.1mH EAS 22 Power Dissipation TC = 25 °C TC = 100 °C PD 25 10 Operating Junction & Storage Tempera.

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PA610ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 160mΩ @VGS = 10V ID 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 8 5.4 32 Avalanche Current IAS 8 Avalanche Energy L = 0.1mH EAS 22 Power Dissipation TC = 25 °C TC = 100 °C PD 25 10 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA RqCS TYPICAL 0.5 MAXIMUM 5 62.5 UNITS °C / W REV 1.1 1 2014/6/16 PA610ATF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdow.


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