P6010DTFG

P6010DTFG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -100V 60mΩ @VGS = -10V ID -24A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM -24 -15 -96 Avalanche Current IAS -52 Avalanche Energy L = 0.1mH EAS 139 Power Dissipation TC = 25 °C TC = 100 °C PD 62 15 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited by package. SYMBOL RqJC TYPICAL MAXIMUM UNITS 2 °C / W Ver 1.0 1 2012/4/16 P6010DTFG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source...