N-CHANNEL MOSFET. 4N100 Datasheet

4N100 MOSFET. Datasheet pdf. Equivalent

Part 4N100
Description N-CHANNEL MOSFET
Feature UNISONIC TECHNOLOGIES CO., LTD 4N100 Power MOSFET 4A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION T.
Manufacture UTC
Datasheet
Download 4N100 Datasheet

UNISONIC TECHNOLOGIES CO., LTD 4N100 Power MOSFET 4A, 1000 4N100 Datasheet
UNISONIC TECHNOLOGIES CO., LTD 4N100-FCQ Preliminary 4A, 4N100-FCQ Datasheet
Recommendation Recommendation Datasheet 4N100 Datasheet





4N100
UNISONIC TECHNOLOGIES CO., LTD
4N100
Power MOSFET
4A, 1000V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N100 is an N-channel MOSFET, it uses UTCs
advanced technology to provide the customers with high
switching speed and high breakdown voltage.
FEATURES
* RDS(ON) 3.5 Ω @ VGS=10V, ID=2.0A
* High switching speed
* High breakdown voltage
SYMBOL
2.Drain
1
TO-220
1
TO-220F
1
TO-220F1
1
TO-220F2
1
TO-251
1
TO-252
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N100L-TA3-T
4N100G-TA3-T
4N100L-TF1-T
4N100G-TF1-T
4N100L-TF2-T
4N100G-TF2-T
4N100L-TF3-T
4N100G-TF3-T
4N100L-TM3-T
4N100G-TM3-T
4N100L-TN3-R
4N100G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
4N100G-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
TF3: TO-220F, TM3: TO-251, TN3: TO-252
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC
4N100
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 8
QW-R209-042.B



4N100
4N100
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Drain-Gate Voltage (RGS=2k)
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VDGR
VGSS
ID
IDM
EAS
dv/dt
1000
1000
±30
4
8
88.2
3.84
V
V
V
A
A
mJ
V/ns
TO-220
140 W
TO-220F/TO-220F1
38 W
Power Dissipation
TO-220F2
PD
40
W
TO-251/TO-252
58 W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=4.2A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD4.0A, di/dt200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
TO-220/TO-220F
TO-220F1/TO-220F2
TO-251/TO-252
θJA
62.5
50
TO-220
0.89
Junction to Case
TO-220F/TO-220F1
TO-220F2
θJC
3.25
3.1
TO-251/TO-252
2.15 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R209-042.B





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