P0465AD

P0465AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.5Ω @VGS = 10V ID 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1，2 TC = 25 °C TC = 100 °C ID IDM 4 2.5 7 Avalanche Energy3 EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 26 10 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25˚ C. SYMBOL RqJC TYPICAL MAXIMUM UNITS 4.8 °C / W REV 1.0 1 2013-12-4 P0465AD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TY...