P5015BD

P5015BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 50mΩ @VGS = 10V ID 24A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 24 15 90 Avalanche Current IAS 19 Avalanche Energy L=0.1mH EAS 18 Power Dissipation TC = 25 °C TC = 100 °C PD 78 31 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.6 62.5 UNITS °C / W Rev 1.0 1 2015/5/4 P5015BD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-S...