P2610BD

P2610BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26.8mΩ @VGS = 10V ID 36A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 36 23 80 Avalanche Current IAS 13.9 Avalanche Energy L =0.1mH EAS 9.7 Power Dissipation TC = 25 °C TC = 100 °C PD 78 31 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RqJC Junction-to-Ambient RqJA 1Pulse width limited by maximum junction temperature. 2Calculated continuous current based on maximum allowable junction temperature. MAXIMUM 1.6 62.5 UNITS °C / W REV 1.2 1 2016/6/6 P2610BD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)...