P0908AD

P0908AD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 9mΩ @VGS = 10V ID 69A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1,2 TC= 25 °C TC= 100 °C ID IDM 69 44 160 Avalanche Current IAS 38 Avalanche Energy L=0.1mH EAS 72 Power Dissipation TC= 25 °C TC= 100°C PD 96 38 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is 55A. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.3 62.5 UNITS °C / W REV 1.1 1 2015/7/29 P0908AD N-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER ...