N-Channel Transistor. P3606HK Datasheet

P3606HK Transistor. Datasheet pdf. Equivalent

Part P3606HK
Description Dual N-Channel Transistor
Feature NIKO-SEM Dual N-Channel Enhancement Mode P3606HK Field Effect Transistor PDFN 5x6P Halogen-Free .
Manufacture NIKO-SEM
Datasheet
Download P3606HK Datasheet

NIKO-SEM Dual N-Channel Enhancement Mode P3606HK Field Eff P3606HK Datasheet
P3606HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM P3606HK Datasheet
Recommendation Recommendation Datasheet P3606HK Datasheet





P3606HK
NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 38mΩ
ID
15A
D1 D1 D2 D2
#1 S1 G1 S2 G2
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
Power Dissipation
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
60
±20
15
10
40
5
4
18.6
17.3
20.8
8
2.3
1.5
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Case
RJA
RJC
55
°C / W
6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
REV 1.0
1
D-49-5



P3606HK
NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 5A
VDS = 5V, ID = 5A
DYNAMIC
60
1.3 1.8
2.3
V
±100 nA
1
A
10
36 47
mΩ
33 38
29 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
541
75
Reverse Transfer Capacitance
Crss
45
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V ,ID = 5A
VDS = 30V ,
ID 5A, VGS = 10V, RGEN =6Ω
13.3
7.7
1.7
4.6
16
10
34
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
IF = 5A, dlF/dt = 100A / S
14.6
5
15
1.3
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2
D-49-5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)