P0920BD

NIKO-SEM N-Channel Enhancement Mode P0920BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 0.42Ω ID 9A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Pulsed Drain Current1 Avalanche Current Avalanche Energy L = 2.8mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS ±20 9 5 31 9 113 62.5 25 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATING THERMAL RESISTANCE SYMBOL Junction-to-Case RJC 1Pulse width limited by maximum junction temperature. TYPICAL MAXIMUM 2 UNITS °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Bo...