N-Channel Transistor. P0920BD Datasheet

P0920BD Transistor. Datasheet pdf. Equivalent

Part P0920BD
Description N-Channel Transistor
Feature NIKO-SEM N-Channel Enhancement Mode P0920BD Field Effect Transistor TO-252 Halogen-Free & Lead-.
Manufacture NIKO-SEM
Datasheet
Download P0920BD Datasheet

P0920BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P0920BD Datasheet
NIKO-SEM N-Channel Enhancement Mode P0920BD Field Effect P0920BD Datasheet
Recommendation Recommendation Datasheet P0920BD Datasheet





P0920BD
NIKO-SEM
N-Channel Enhancement Mode
P0920BD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
0.42Ω
ID
9A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
L = 2.8mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
9
5
31
9
113
62.5
25
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
2
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source
On-State Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
200
V
123
VDS = 0V, VGS = ±20V
±100 nA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125 °C
1
A
10
VGS = 4.5V, ID = 4.5A
VGS = 10V, ID = 4.5A
0.35 0.48
Ω
0.33 0.42
REV 1.0
1
D-31-1



P0920BD
NIKO-SEM
N-Channel Enhancement Mode
P0920BD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 10V, ID = 4.5A
DYNAMIC
10
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 25V, f = 1MHz
759
77
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =160V, VGS = 10V,
ID = 9A
VDD = 100V,
ID 9A, VGS = 10V, RGEN = 6Ω
21
29.5
2.8
11
28
99
85
97
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
IS
Forward Voltage1
VSD IF = 9A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 9A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
159
822
9
1.6
S
nF
nC
nS
A
V
nS
nC
REV 1.0
2
D-31-1





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