N-Channel Transistor. P2610ADG Datasheet

P2610ADG Transistor. Datasheet pdf. Equivalent

Part P2610ADG
Description N-Channel Transistor
Feature NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2610ADG TO-252 Halogen-Free & Lead-F.
Manufacture NIKO-SEM
Datasheet
Download P2610ADG Datasheet

P2610ADG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2610ADG Datasheet
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2610ADG Datasheet
Recommendation Recommendation Datasheet P2610ADG Datasheet





P2610ADG
NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2610ADG
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ
ID
50A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
50
35.5
150
53
140
128
51
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
0.97
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
100
1.7 2.5
3.4
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
1
A
10
VDS = 10V, VGS = 10V
150
A
REV 1.3
Nov-25-2009
1



P2610ADG
NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2610ADG
TO-252
Halogen-Free & Lead-Free
Drain-Source-On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 25A
VDS = 40V, ID = 25A
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Crss
Qg
Qgs
Qgd
VDS =80V, VGS = 10V,
ID = 27.5A
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDD = 50V, ID 25A,
VGS = 10V, RGS = 25Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 25A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
21 26 mΩ
38 S
5000
285
189
80
28
23
2
25
250
110
140
pF
nC
Ω
nS
50 A
1.5 V
100 nS
380 nC
REMARK: THE PRODUCT MARKED WITH “P2610ADG”, DATE CODE or LOT #
REV 1.3
Nov-25-2009
2





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