N-Channel Transistor. P8010BD Datasheet

P8010BD Transistor. Datasheet pdf. Equivalent

Part P8010BD
Description N-Channel Transistor
Feature NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P8010BD TO-252 Halogen-Free & Lead-Fr.
Manufacture NIKO-SEM
Datasheet
Download P8010BD Datasheet

P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P8010BD Datasheet
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P8010BD Datasheet
Recommendation Recommendation Datasheet P8010BD Datasheet





P8010BD
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID
15A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
MOSFET dV/dt Ruggedness
Peak Diode Recovery dV/dt2
TC = 25 °C
TC = 100 °C
L = 0.1mH
VDS
VGS
ID
IDM
IAS
EAS
dV/dt
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
PD
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
15
9
35
12
7.2
16.2
4.1
46
18
-55 to 150
UNITS
V
V
A
mJ
V/nS
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25
TYPICAL
MAXIMUM
2.7
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
1.3 1.8
V
2.3
±100 nA
1
10 A
REV 1.1
1
D-51-5



P8010BD
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 15A
VDS = 5V, ID = 15A
DYNAMIC
35 A
67 95
mΩ
61 85
25 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
527
68
Reverse Transfer Capacitance
Crss
37
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10 V
VDS = 0.5V(BR)DSS, ID = 15A
VDS = 40V
ID 15A, VGS = 10V, RGEN =6Ω
18.5
2.7
5.1
11
48
80
73
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
pF
Ω
nC
nS
Continuous Current
Forward Voltage1
IS
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 15A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
15 A
1.1 V
33 nS
35 nC
REV 1.1
2
D-51-5





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