N-Channel Transistor. PA610AD Datasheet

PA610AD Transistor. Datasheet pdf. Equivalent

Part PA610AD
Description N-Channel Transistor
Feature NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA610AD TO-252 Halogen-Free & Lead-Fr.
Manufacture NIKO-SEM
Datasheet
Download PA610AD Datasheet

PA610AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PA610AD Datasheet
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PA610AD Datasheet
Recommendation Recommendation Datasheet PA610AD Datasheet





PA610AD
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PA610AD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100 160mΩ
ID
12A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAs
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
12
7
40
24
29
42
17
-55 to 150
UNITS
V
A
mJ
W
°C
MAXIMUM
3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 66V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 5.5A
VDS = 10V, ID = 5.5A
LIMITS
UNIT
MIN TYP MAX
100
2.0 3.2
4.0
V
±250 nA
1
µA
10
40 A
145 160 mΩ
2S
REV 1.0
Jun-03-2010
1



PA610AD
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PA610AD
TO-252
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
1060
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
124
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =50V, VGS = 10V,
ID = 5.5A
VDD = 50V,
ID 5.5A, VGS = 10V, RGS = 25Ω
64
18
5
6
10
40
30
28
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 5.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 5.5A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
92
280
12
1.2
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “PA610AD”, DATE CODE or LOT #
REV 1.0
Jun-03-2010
2





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