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P0160AI Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | P0160AI |
|---|---|
| Description | N-Channel MOSFET |
| Feature | P0160AI
N-Channel Enhancement Mode MOSFE T
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
12Ω @VGS = 10V
ID 1A
TO-251
A BSOLUTE MAXIMUM RATINGS (TA = 25 °C Un less Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Sourc e Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
P ulsed Drain Current1,2 Avalanche Curren t3 Avalanche Energy3
TC = 25 °C TC = 100 °C
L = 10mH
ID
IDM IAS EAS
1 0. 6 3 1. 4 10 Power DissipationA TC = 25 °C TC = 100 °C PD 28 0. 6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W ° C THERMAL RESISTANCE . |
| Manufacture | UNIKC |
| Datasheet |
| Part | P0160AI |
|---|---|
| Description | N-Channel MOSFET |
| Feature | P0160AI
N-Channel Enhancement Mode MOSFE T
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
12Ω @VGS = 10V
ID 1A
TO-251
A BSOLUTE MAXIMUM RATINGS (TA = 25 °C Un less Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Sourc e Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
P ulsed Drain Current1,2 Avalanche Curren t3 Avalanche Energy3
TC = 25 °C TC = 100 °C
L = 10mH
ID
IDM IAS EAS
1 0. 6 3 1. 4 10 Power DissipationA TC = 25 °C TC = 100 °C PD 28 0. 6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W ° C THERMAL RESISTANCE . |
| Manufacture | UNIKC |
| Datasheet |
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