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P0160AI Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part P0160AI
Description N-Channel MOSFET
Feature P0160AI N-Channel Enhancement Mode MOSFE T PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 12Ω @VGS = 10V ID 1A TO-251 A BSOLUTE MAXIMUM RATINGS (TA = 25 °C Un less Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Sourc e Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 P ulsed Drain Current1,2 Avalanche Curren t3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 1 0.
6 3 1.
4 10 Power DissipationA TC = 25 °C TC = 100 °C PD 28 0.
6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W ° C THERMAL RESISTANCE .
Manufacture UNIKC
Datasheet
Download P0160AI Datasheet
Part P0160AI
Description N-Channel MOSFET
Feature P0160AI N-Channel Enhancement Mode MOSFE T PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 12Ω @VGS = 10V ID 1A TO-251 A BSOLUTE MAXIMUM RATINGS (TA = 25 °C Un less Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Sourc e Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 P ulsed Drain Current1,2 Avalanche Curren t3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 1 0.
6 3 1.
4 10 Power DissipationA TC = 25 °C TC = 100 °C PD 28 0.
6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W ° C THERMAL RESISTANCE .
Manufacture UNIKC
Datasheet
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P0160AI

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P0160AI

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