N-Channel MOSFET. P6006BI Datasheet

P6006BI MOSFET. Datasheet pdf. Equivalent

Part P6006BI
Description N-Channel MOSFET
Feature P6006BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 65mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P6006BI
P6006BI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 65mΩ @VGS = 10V
ID
18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
11.8
34
Avalanche Current
IAS 18
Avalanche Energy
L = 0.1mH
EAS
16
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL MAXIMUM UNITS
2.5 °C / W
Ver 1.0
1 2012/4/12



P6006BI
P6006BI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
1.0 1.6 2.5
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 8A
VGS = 10V, ID = 12A
VDS = 15V, ID = 12A
63 80
53 65
22
DYNAMIC
Input Capacitance
Ciss
601
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
48
Reverse Transfer Capacitance
Crss
33
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.2
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg VGS = 10V
VGS = 5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 12A
VDS = 30V, ID @ 12A,
VGS = 10V, RGEN = 6Ω
13
7.6
4.5
2.4
8.3
37
44
53
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 12A, VGS = 0V
18
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 12A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
23
19
2Independent of operating temperature.
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/12





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