N-channel MOSFET. ELM33414CA-S Datasheet

ELM33414CA-S MOSFET. Datasheet pdf. Equivalent

Part ELM33414CA-S
Description Single N-channel MOSFET
Feature Single N-channel MOSFET ELM33414CA-S ■General description ELM33414CA-S uses advanced trench technol.
Manufacture ELM Electronics
Datasheet
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Single N-channel MOSFET ELM33414CA-S ■General description E ELM33414CA-S Datasheet
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ELM33414CA-S
Single N-channel MOSFET
ELM33414CA-S
■General description
ELM33414CA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 3.5V and internal
ESD protection is included.
http://www.elm-tech.com
■Features
• Vds=60V
• Id=300mA
• Rds(on) < 2Ω (Vgs=10V)
• Rds(on) < 3Ω (Vgs=4.5V)
• Rds(on) < 5Ω (Vgs=3.5V)
• ESD Rating : 2000V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=100°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit Note
60 V
±20 V
300
190
mA
1 A3
0.35
0.14
W
-40 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Typ.
Max.
350
Unit
°C/W
Note
■Pin configuration
SOT-23(TOP VIEW)
3
12
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
Rev.1.0
4-1



ELM33414CA-S
Single N-channel MOSFET
■Electrical characteristics
ELM33414CA-S
http://www.elm-tech.com
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage BVdss Id=100μA, Vgs=0V
60
V
Zero gate voltage drain current
Vds=48V, Vgs=0V
Idss
Vds=40V, Vgs=0V, Ta=125°C
1
μA
10
Gate-body leakage current
Igss Vds=0V, Vgs=±16V
±30 μA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=100μA
1.0 1.8 2.5 V
On state drain current
Id(on) Vgs=10V, Vds=10V
1
A1
Vgs=10V, Id=200mA
1.6 2.0
Static drain-source on-resistance Rds(on) Vgs=4.5V, Id=100mA
1.7 3.0 Ω 1
Vgs=3.5V, Id=10mA
2.1 5.0
Forward transconductance
Gfs Vds=20V, Id=200mA
0.18 S 1
Diode forward voltage
Vsd If=200mA, Vgs=0V
1.2 V 1
Max. body-diode continuous current Is If=200mA, Vgs=0V
300 mA
DYNAMIC PARAMETERS
Input capacitance
Ciss
36 pF
Output capacitance
Coss Vgs=0V, Vds=25V, f=1MHz 10 pF
Reverse transfer capacitance
Crss
6 pF
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Vgs=10V, Vds=30V
Qgs
Id=200mA
Qgd
1.6 nC 2
0.2 nC 2
1.0 nC 2
Turn-on delay time
td(on) Vds=30V, Vgs=10V
30 ns 2
Turn-off delay time
td(off) Id=200mA, Rgen=10Ω
125 ns 2
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4-2
Rev.1.0





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